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12 May 2005 The impact of illumination on feature fidelity for CPL mask technology
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Abstract
Various types of line ends have been evaluated for either straight CPL mask or hybrid type builds. The authors will focus on image line end shortening and the impact of through dose and focus performance for very high NA ArF imaging. Simulations on test structures have been calculated along with in photoresist simulations to predict the impact on process window capability. Test structures have been designed and fabricated into a functional test for evaluation. Process evaluations have been completed and exposure-defocus window calculated.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jan Pieter Kuijten, Arjan Verhappen, Will Conley, Stephan van de Goor, Lloyd Litt, Wei Wu, Kevin Lucas, Bernie Roman, Bryan Kasprowicz, Chris Progler, Robert Socha, Doug van den Broeke, Kurt Wampler, Tom Laidig, and Stephen Hsu "The impact of illumination on feature fidelity for CPL mask technology", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005); https://doi.org/10.1117/12.605481
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