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12 May 2005XLA-200: the third-generation ArF MOPA light source for immersion lithography
The first generation MOPA-based ArF laser XLA-100 was introduced in January 2003 in response to the needs of the high NA ArF scanners for higher power and narrower spectral bandwidth. The second generation product XLA-105 was introduced in early 2004. This paper presents our third generation MOPA-based ArF laser product XLA-200 that is designed and engineered to meet the light source requirements of the ArF immersion lithography. It is expected to be used for 65-nm and 45-nm volume production of semiconductor devices. The XLA-200 is capable of producing a 60W of ultra-line-narrowed 193nm light with the FWHM bandwidth of less than 0.15pm and the E95% integral bandwidth of less than 0.35pm. It features state-of-the-art on-board bandwidth metrology tool that measures E95% bandwidth as well as FWHM. Real-time accurate bandwidth information can be utilized for lithography exposure tool feedback control. The improved dual-chamber laser gas control ensures excellent bandwidth stability, which enables tighter CD control. Together with a lower cost of ooperation, the XLA-200 sets a new performance level for the dual chamber 193nm light source for microlithography.
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Toshihiko Ishihara, Robert Rafac, Wayne J. Dunstan, Fedor Trintchouk, Christian Wittak, Richard Perkins, Robert Bergstedt, Walter Gillespie, "XLA-200: the third-generation ArF MOPA light source for immersion lithography," Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005);