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12 May 2005 XLA-200: the third-generation ArF MOPA light source for immersion lithography
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The first generation MOPA-based ArF laser XLA-100 was introduced in January 2003 in response to the needs of the high NA ArF scanners for higher power and narrower spectral bandwidth. The second generation product XLA-105 was introduced in early 2004. This paper presents our third generation MOPA-based ArF laser product XLA-200 that is designed and engineered to meet the light source requirements of the ArF immersion lithography. It is expected to be used for 65-nm and 45-nm volume production of semiconductor devices. The XLA-200 is capable of producing a 60W of ultra-line-narrowed 193nm light with the FWHM bandwidth of less than 0.15pm and the E95% integral bandwidth of less than 0.35pm. It features state-of-the-art on-board bandwidth metrology tool that measures E95% bandwidth as well as FWHM. Real-time accurate bandwidth information can be utilized for lithography exposure tool feedback control. The improved dual-chamber laser gas control ensures excellent bandwidth stability, which enables tighter CD control. Together with a lower cost of ooperation, the XLA-200 sets a new performance level for the dual chamber 193nm light source for microlithography.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Toshihiko Ishihara, Robert Rafac, Wayne J. Dunstan, Fedor Trintchouk, Christian Wittak, Richard Perkins, Robert Bergstedt, and Walter Gillespie "XLA-200: the third-generation ArF MOPA light source for immersion lithography", Proc. SPIE 5754, Optical Microlithography XVIII, (12 May 2005);


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