17 May 2005 Oxide etch rate estimation using plasma impedance monitoring
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Abstract
The oxide etch rate of a single chamber of plasma etch tool is estimated from plasma impedance data collected during the etch process. The etch rate is estimated using a linear statistical model and etch rate measurements performed on special test wafers. Stepwise regression is used to select possible predictors from a large pool of summary statistics calculated from the plasma impedance waveforms. The relationship of the estimated mean etch rate to yield and potential yield optimization is explored. An example application of an advanced process controller to optimize the yield of the wafers processed by the etch tool in the presence of varying chamber conditions is also presented.
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Daniel Tsunami, Daniel Tsunami, James McNames, James McNames, Bruce Whitefield, Bruce Whitefield, Paul Rudolph, Paul Rudolph, Jeff Zola, Jeff Zola, "Oxide etch rate estimation using plasma impedance monitoring", Proc. SPIE 5755, Data Analysis and Modeling for Process Control II, (17 May 2005); doi: 10.1117/12.599997; https://doi.org/10.1117/12.599997
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