17 May 2005 Real-time temperature characterization and monitoring as a method of fault isolation
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The ability to control critical dimensions of structures on semiconductor devices is paramount to improving die yield and device performance. Historical methods of in-line metrology, Scanning Electron Microscopes (SEM), ellipsometry, and scatterometry give the ability to monitor critical dimensions and film thickness. These methods, with some challenges on smaller technology nodes, have proven effective in identification of changes critical measurements. They let you know that something has changed. The next step in factory performance is to improve the ability to quickly identify the root cause of the variation and to address it to minimize the impact on revenue. Our focus has been on some novel means of characterizing tool performance. In this paper, we outline our methods of system fingerprinting of real-time temperature measurements. This trace represents what the wafer is subjected to during normal processing. Trough periodic monitoring we are able to determine if the efficacy of conductance between the plasma and the chuck is normal. In addition, when variations in down stream measurements (CD’s and film thickness) arise, we are able to quickly identify if our production tools are operation normally. If there are abnormalities in the tool performance, we are able to quickly identify where and when the problem is taking place. The real time aspect of monitoring plasma on temperature is an added level of resolution that aids in trouble shooting tool performance.
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Paul Rudolph, Lindsey Kato, "Real-time temperature characterization and monitoring as a method of fault isolation", Proc. SPIE 5755, Data Analysis and Modeling for Process Control II, (17 May 2005); doi: 10.1117/12.600189; https://doi.org/10.1117/12.600189

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