Full chip gate CD error prediction for model-based OPC

Vincent Yongsheng Shu; Byoung Il Choi; Shyue-Fong Quek

doi:10.1117/12.599253

5 May 2005 Full chip gate CD error prediction for model-based OPC

Vincent Yongsheng Shu, Byoung Il Choi, Shyue-Fong Quek

Proceedings Volume 5756, Design and Process Integration for Microelectronic Manufacturing III; (2005) https://doi.org/10.1117/12.599253
Event: Microlithography 2005, 2005, San Jose, California, United States

Abstract

In this paper, a technique for full chip gate CD(critical dimension) error prediction based on empirical models will be presented and discussed. In order to be compatible with existing common terminologies, this technique can also be called model-based full chip gate CD verification, which has become an integral part of closed-loop design-to-silicon flow of gate layer masking processes at 90nm and 65nm technology nodes. The empirical optical-and-process models can be same or different (such as with defocus) from the ones which are widely used in model based OPC and ORC. Similar to but different from conventional ORC, which normally addresses the minimum feature check or fatal error check, the model-based gate CD verification technique will focus on CD error prediction and CD error distribution analysis for gate CD related yield improvement efforts. Current commercial ORC or model-based verification tools provide the capability of EPE (edge placement error) check and analysis, and with certain additional techniques they may also provide the capability of gate CD prediction or simulation for selected targets or figures. The new model-based gate CD verification technique will provide the capability of full chip CD error prediction and CD error distribution analysis for all concerned small gate CD targets.

Citation Download Citation

Vincent Yongsheng Shu, Byoung Il Choi, and Shyue-Fong Quek "Full chip gate CD error prediction for model-based OPC", Proc. SPIE 5756, Design and Process Integration for Microelectronic Manufacturing III, (5 May 2005); https://doi.org/10.1117/12.599253

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
8 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Optical proximity correction

Model-based design

Critical dimension metrology

Error analysis

Algorithm development

Resolution enhancement technologies

Visualization

Show All Keywords

Keywords/Phrases

Search In:

Publication Years