9 May 2005 Near-field nano-Raman imaging of Si device structures
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Apertureless-based, near-field Raman imaging holds the potential for nanoscale stress metrology in emerging Si devices. Preliminary application of near-field Raman imaging on Si device structures has demonstrated the potential for stress measurements. However, detailed investigations have not been published regarding the effect of tip radius on observed near-field enhancement. Such investigations are important to understand the fundamental limits regarding the signal-to-noise ratio of the measurement and the spatial resolution that can potentially be achieved before wide application to semiconductor metrology can be considered. Investigations are presented into near-field enhancement of Raman scattering from Si device structures using a modified near-field optical microscope (NSOM). The nano-Raman system utilizes an off-axis (45°) backscattering NSOM geometry with free-space collection optics. The spectroscopic configuration utilizes a single-bounce spectrometer incorporating a holographic notch filter assembly utilized as a secondary beam-splitter for an apertureless backscattering collection geometry. Near-field enhancement is observed for both Al- and Ag-coated probes. An inverse square power-law relationship is observed between near-field enhancement factor and tip radius.
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Jacob Atesang, Jacob Atesang, Robert Geer, Robert Geer, } "Near-field nano-Raman imaging of Si device structures", Proc. SPIE 5766, Testing, Reliability, and Application of Micro- and Nano-Material Systems III, (9 May 2005); doi: 10.1117/12.600343; https://doi.org/10.1117/12.600343

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