Paper
8 December 2004 20-nm linewidth nanoimprint mold prepared by selectively etched multilayer thin film
Yongjun Zhang, Guanqi Han, Xinfan Huang, Wei Li, Xiping Hao, Guobin Ma, Kunji Chen
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608169
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
A novel method to prepare nanomolds is reported, which is using multilayer thin-film deposition technique. A-Si/SiNx multilayer thin film is deposited on Si substrate in the conventional plasma enhanced chemical vapour deposition (PECVD) system. Then the relievo structure of alternative strips and grooves can be obtained on the cleaved cross-section of multilayer thin film by selective etching process. The strips of the etched sample have smooth and vertical sidewalls with small roughness. Due to the slow deposition rate, the thickness of the sublayer, therefore the size of the strips and grooves can be controlled on the nanometer scale by altering deposition time. The smallest width we get by now is the 20nm strips and 20nm grooves.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yongjun Zhang, Guanqi Han, Xinfan Huang, Wei Li, Xiping Hao, Guobin Ma, and Kunji Chen "20-nm linewidth nanoimprint mold prepared by selectively etched multilayer thin film", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608169
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Cited by 3 scholarly publications.
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KEYWORDS
Etching

Multilayers

Thin films

Ultrasonics

Particles

Plasma enhanced chemical vapor deposition

Thin film deposition

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