8 December 2004 Deposition and characterizations of GeCN thin films
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607463
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Germanium-carbon-nitride (GeCN) thin films were deposited on different substrates by reactive magnetic co-sputtering. As-deposited films were characterized with respect to composition, microstructure, and optical relection. The results show that quality of the film deposited on ZrN substrate is better and the band gaps is about 3.4 eV.
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Fuchun Xu, Fuchun Xu, Jun Yong Kang, Jun Yong Kang, } "Deposition and characterizations of GeCN thin films", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607463; https://doi.org/10.1117/12.607463
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