8 December 2004 Effects of deposition conditions and annealing process on the infrared optical properties of diamond films grown by MPCVD
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608045
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
The effects of deposition conditions and annealing process on the optical properties of diamond films on silicon substrate grown by MPCVD method are investigated by infrared spectroscopic ellipsometry (2.5-12.5μm). Results indicate that the low nucleation temperature will be in favor of decreasing the infrared absorption at 3.5μm. The refractive index n of diamond films deposited under higher growth temperature will fluctuate weakly. After annealing in N2 atmosphere an obvious improvement of the infrared optical properties is also found. After annealing the value of k was about 10-12~10-15. However, for non-annealed diamond film, the value of k was about 10-3~10-14. After annealing the refractive index n increased and was close to that of single crystal Type IIa natural diamond.
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Linjun Wang, Yiben Xia, Minglong Zhang, Qingfeng Su, Beibei Gu, Yanyan Lou, "Effects of deposition conditions and annealing process on the infrared optical properties of diamond films grown by MPCVD", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608045; https://doi.org/10.1117/12.608045
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