Efficient field emission from porous silicon

Yongsheng Zhang; Ke Yu; Laiqiang Luo; Ziqiang Zhu

doi:10.1117/12.607469

8 December 2004 Efficient field emission from porous silicon

Yongsheng Zhang, Ke Yu, Laiqiang Luo, Ziqiang Zhu

Author Affiliations +

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607469
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Patterned porous silicon (PS) films were fabricated based on hydrogen ion implantation technique and typical electrochemical anodic etching method. The surface morphology and characteristics of the films were characterized by scanning electron microscopy (SEM), X-ray diffraction (XRD), and atomic force microscopy (AFM). The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm² was obtained. The emission current density from the PS films reached 1mA/cm² under a applied field of about 12.5V/μm. The experimental results demonstrate that the PS films have great potential applications for flat panel displays.

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Yongsheng Zhang, Ke Yu, Laiqiang Luo, and Ziqiang Zhu "Efficient field emission from porous silicon", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607469

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