8 December 2004 Field emission behavior of GaN nanoparticles and nanobelts
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608008
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Gallium nitride (GaN) nanoparticles and nanobelts films are successfully synthesized on Si (111) substrates through ammoniating Ga2O3 thin films deposited by radio frequency magnetron sputtering. X-ray diffraction (XRD), scanning electronic microscope (SEM), transmission electronic microscope (TEM) are carried out to analyze as-synthesized GaN products. The field emission measurements show that the as-synthesized GaN nanoparticles and nanobelts have lower turn-on field of 5.8 and 6.1V/μm at the current density of 0.1μA/cm2, respectively. It is found that the Fowler-Nordheim (FN) plot of nanobelts exhibits nonlinearity. The experimental results demonstrated that there were great potential applications of the GaN nanoparticles and nanobelts for flat panel displays.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ke Yu, Yongsheng Zhang, Laiqiang Luo, Ziqiang Zhu, "Field emission behavior of GaN nanoparticles and nanobelts", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608008; https://doi.org/10.1117/12.608008
PROCEEDINGS
4 PAGES


SHARE
Back to Top