8 December 2004 Formation mechanism of the VO2 polycrystalline film prepared by modified ion-beam enhanced deposition
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607752
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
A new method of modified Ion Beam Enhanced Deposition (IBED) was designed to form VO2 polycrystalline film with good properties. While argon ion beam sputtered V2O5 powder target to deposit vanadium oxide film, a high current Ar+/H+ mixing beam with a high dose was implanted into the deposited film. The VO2 film with the Temperature Coefficient of Resistance (TCR) as high as 4%/K was obtained after subsequent appropriate annealing at the temperature above 500°C. The formation mechanism of the IBED VO2 film was discussed as following: the damage effect of the argon ion beam implantation broken some of V-O bands; The deoxidization effect of implanted hydrogen reduced V2O5 to VO2. The mixing effect could make IBED film adhere to the substrate firmly. The doping effect of the implanted argon introduced stress in the film to decrease the phase transition temperature. The bombardment effect made the film more compact, decreased oxygen vacancy density, reduced the grain boundary width, and increased the TCR of the IBED VO2 polycrystalline films.
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Jinhua Li, Jinhua Li, Ningyi Yuan, Ningyi Yuan, } "Formation mechanism of the VO2 polycrystalline film prepared by modified ion-beam enhanced deposition", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607752; https://doi.org/10.1117/12.607752
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