8 December 2004 Formation of GaAs hollow above InAs quantum dots
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607378
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
GaAs hollow nanostructure is constructed above low-temperature (250°C) InAs quantum dots after a thin GaAs layer capping at 480°C. The hollows mostly disappeared after the high temperature annealing at 580°C. The formation mechanism is simply discussed.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Hua Han Zhan, Hua Han Zhan, Jun Yong Kang, Jun Yong Kang, } "Formation of GaAs hollow above InAs quantum dots", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607378; https://doi.org/10.1117/12.607378
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