8 December 2004 Impact of diode facet reflectivity on the fiber grating external-cavity semiconductor laser
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607429
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
The scattering matrix method is used to analyze the multiple reflection effect between the laser diode facet and the fiber grating facet by considering the fiber grating external cavity laser diode (FGECL) as a four-mirror cavity laser. When neglecting other important parameters such as butt-coupling distance between the diode and the fiber facets, coupling efficiency, external cavity length, it is shown that low reflectivity is not a crucial factor for the laser characteristics such as SMSR. Experimentally high SMSR fiber grating external cavity laser is fabricated with a relatively large residual facet reflectivity (about 1%), which is coincident with our simulation results.
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Qingyang Xu, Qingyang Xu, Shaowu Chen, Shaowu Chen, } "Impact of diode facet reflectivity on the fiber grating external-cavity semiconductor laser", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607429; https://doi.org/10.1117/12.607429
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