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8 December 2004 Influence of annealing on the nanosecond laser damage resistance of the dielectric mirror coatings at 1064-nm prepared by IBS
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607467
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Laser induced damage of multilayer has been investigated at different annealing temperatures. Ta2O5/SiO2 dielectric mirror coatings for 1064nm were prepared by ion beam sputtering (IBS), and then annealed in air at 250 centigrade and 350 centigrade, respectively. The microstructure of the samples was characterized by X-Ray diffraction (XRD). Absorption of the multilayer was measured by surface thermal lensing (STL) technique. Single-shot laser-induced damage threshold (LIDT) was assessed using 1064 nm Q-switched pulsed laser at a pulse length of 12ns. It was found that the center wavelength shifted to a longer wavelength as the annealing temperature increased. However, the samples kept its non-crystalline structure even after annealing. The absorbance of the samples decreased after annealing. An obvious decrease of the single-shot laser-induced damage threshold was found after annealing. Optical microscopy was employed in mapping laser-induced damage morphology features after laser irradiation.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tao Wang, Hongbo He, Yuanan Zhao, Jianda Shao, and Zhengxiu Fan "Influence of annealing on the nanosecond laser damage resistance of the dielectric mirror coatings at 1064-nm prepared by IBS", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607467
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