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8 December 2004 Influence of buffer layer on dielectric properties of (Ba1-xSrx)TiO3 thin films
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607623
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Ba0.6Sr0.4TiO3 thin films with Ba1-xSrxTiO3 (1-x = 0, 0.4 0.5, 0.6, 0.7) buffer layers were deposited on LaAlO3 (LAO) substrates by sol-gel techniques, respectively. The effects of compositions and thickness of buffer layers on the dielectric properties of BST films were discussed. Films were characterized by X-ray diffraction technique (XRD), field emission scanning electron microscope (FE-SEM) and dielectric measurements. It was found that the structure and properties of films varied with different compositions of buffer layer. The Film Ba0.5Sr0.5TiO3 buffer layer of 20 nm in thickness has higher tunability (31.2 %), lower dielectric loss (0.006), and larger FOM of 52 at 1MHz by applied DC bias electric field of 60 KV/cm. As the thickness of the buffer layer increased to 60 nm, the phase structure of buffer layer materials would influence the dielectric properties of the main films.
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Dongwen Peng, Zhongyan Meng, and Wenbiao Wu "Influence of buffer layer on dielectric properties of (Ba1-xSrx)TiO3 thin films", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607623
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