8 December 2004 Investigation of electrical, structural, and optical properties of very thin oxide/a-Si:H/c-Si interfaces passivated by cyanide treatment
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608684
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
The paper deals with investigation of electrical, structural and optical properties of very thin oxide/a-Si:H interfaces passivated by chemical treatment by KCN and HCN solutions. The oxide layers were prepared by thermal, chemical and plasma or ion beam assisted oxidations. Interface properties were evaluated by charge version of deep level transient spectroscopy, C-V measurements, X-ray diffraction (in both Bragg-Brentano and grazing incidence modes), optical reflectance (based on genetic algorithm) and photoluminescence. Considerable interest was devoted to distribution of three dominant groups of a-Si:H defect states in the band gap of the semiconductor as well as their response to bias annealing and light soaking experiments. We will present also dominant result - increase of the efficiency of a-Si:H based solar cells after chemical treatment. Finally, we will present the chemical passivation and oxidization as promising techniques suitable for applications in the field of nanotechnology.
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Emil Pincik, Emil Pincik, Hikaru Kobayashi, Hikaru Kobayashi, Stanislav Jurecka, Stanislav Jurecka, Matej Jergel, Matej Jergel, Helena Gleskova, Helena Gleskova, Masao Takahashi, Masao Takahashi, Robert Brunner, Robert Brunner, Naozumi Fujiwara, Naozumi Fujiwara, Jarmila Mullerova, Jarmila Mullerova, } "Investigation of electrical, structural, and optical properties of very thin oxide/a-Si:H/c-Si interfaces passivated by cyanide treatment", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608684; https://doi.org/10.1117/12.608684
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