MBE growth and magnetoresistance properties of PrSrMnO3 films on NdGaO3(100) substrate

P. P. Chen; G. J. Liu; H. Makino; Wei Lu; Takafumi Yao

doi:10.1117/12.607465

8 December 2004 MBE growth and magnetoresistance properties of PrSrMnO₃ films on NdGaO₃(100) substrate

P. P. Chen, G. J. Liu, H. Makino, Wei Lu, Takafumi Yao

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607465
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Pr_1-xSr_xMnO₃ (100) thin films were prepared on NdGaO₃ (100) substrate by RF-plasma-assisted molecular beam epitaxy method. The films were characterized by reflection high-energy electron diffraction, atomic force microscope and x-ray diffraction methods, indicating perfect surface smoothness and high crystalline quality. Large low field magnetoresistance effects with strong anisotropic properties of the non-stoichiometric (Pr_1-xSrx)yMnO₃ films have been observed. These results may be connected with the large A-site deficient in the films.

Citation Download Citation

P. P. Chen, G. J. Liu, H. Makino, Wei Lu, and Takafumi Yao "MBE growth and magnetoresistance properties of PrSrMnO₃ films on NdGaO₃(100) substrate", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607465

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