MBE growth and properties of InN and InN-based diluted magnetic semiconductors

P. P. Chen; H. Makino; Wei Lu; Takafumi Yao

doi:10.1117/12.607268

8 December 2004 MBE growth and properties of InN and InN-based diluted magnetic semiconductors

P. P. Chen, H. Makino, Wei Lu, Takafumi Yao

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607268
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

InN films were grown by N₂ plasma-assisted molecular beam epitaxy (MBE) on Al₂O₃ substrates. The films were characterized by reflection high-energy electron diffraction, atomic force microscope, x-ray diffraction methods and Raman spectrum, indicating high crystalline quality of the films. The optical absorption and photoluminescence measurement show the band-gap energy of InN films was located about 1.0-1.1 eV. InN-based diluted magnetic semiconductor (DMS) In_1-xMn_xN and In_1-xCr_xN films were prepared by N₂ plasma-assisted MBE at low temperature. Microstructure characterization indicates Mn was homogeneously incorporated into InN up to 4% and 10% respectively at 300°C and 200°C, while Cr was incorporated up to 4% at 300°C. A paramagnetic to spin-glass transition was observed at 3 K in In_0.9Mn_0.1N films grown at 200°C. Room temperature ferromagnetism was observed for the homogeneous In_0.98Cr_0.02N films.

Citation Download Citation

P. P. Chen, H. Makino, Wei Lu, and Takafumi Yao "MBE growth and properties of InN and InN-based diluted magnetic semiconductors", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607268

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