8 December 2004 MBE growth and properties of InN and InN-based diluted magnetic semiconductors
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607268
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
InN films were grown by N2 plasma-assisted molecular beam epitaxy (MBE) on Al2O3 substrates. The films were characterized by reflection high-energy electron diffraction, atomic force microscope, x-ray diffraction methods and Raman spectrum, indicating high crystalline quality of the films. The optical absorption and photoluminescence measurement show the band-gap energy of InN films was located about 1.0-1.1 eV. InN-based diluted magnetic semiconductor (DMS) In1-xMnxN and In1-xCrxN films were prepared by N2 plasma-assisted MBE at low temperature. Microstructure characterization indicates Mn was homogeneously incorporated into InN up to 4% and 10% respectively at 300°C and 200°C, while Cr was incorporated up to 4% at 300°C. A paramagnetic to spin-glass transition was observed at 3 K in In0.9Mn0.1N films grown at 200°C. Room temperature ferromagnetism was observed for the homogeneous In0.98Cr0.02N films.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
P. P. Chen, P. P. Chen, H. Makino, H. Makino, Wei Lu, Wei Lu, Takafumi Yao, Takafumi Yao, } "MBE growth and properties of InN and InN-based diluted magnetic semiconductors", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607268; https://doi.org/10.1117/12.607268
PROCEEDINGS
5 PAGES


SHARE
Back to Top