8 December 2004 Microstructure and properties of sol-gel-derived (La,Sr)CoO3 thin film with compositional fluctuation La/Sr ratio
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004); doi: 10.1117/12.607621
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Thin films of Lanthanum strontium cobalite [(La1-xSrx)CoO3, LSCO] were directly spin-coated onto SiO2/Si (1 0 0) substrates with compositional fluctuation La/Sr ratio, followed by rapid thermal annealing (RTA). The effects of different La/Sr ratios on the microstructure, surface morphology and electrical properties of the films were examined by X-ray diffraction (XRD), scanning electrical microscopy (SEM) and four probe measurements, respectively. The results indicate that the thin film displays a structure transform from rhombohedral phase to cubic phase around x=0.5, and that the resistivity of the thin film decreases with the increase of La/Sr ratio at the first, then increase slightly. A minimum value of resistivity of LSCO appears at x=0.5. In addition, the effect of the annealing temperature on the electrical properties of La0.5Sr0.5CoO3 films is discussed.
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Wei Lu, Ping Zheng, Zhongyan Meng, Wenbiao Wu, "Microstructure and properties of sol-gel-derived (La,Sr)CoO3 thin film with compositional fluctuation La/Sr ratio", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607621; https://doi.org/10.1117/12.607621
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KEYWORDS
Strontium

Lanthanum

Thin films

Annealing

Ions

Oxygen

Silicon

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