8 December 2004 Optimization for the growth of CVD diamond on Al2O3 and the response to alpha particle irradiation
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608044
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
A diamond film was grown on alumina ceramic by micro-wave plasma chemical vapor deposition (MPCVD) and was fabricated into an interdigited alpha-particle detector. By optimizing growth parameters in MPCVD, we found that under the conditions with carbon source (alcohol/hydrogen) concentration in 0.8% and deposition temperature at 850°C, the least content of sp2 and the best quality of diamond film could be obtained. Photocurrent under α-particle irradiation was in the range of 10-5~10-4A within one hundred voltages, and dark current was about 10-9~10-8A.
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Yanyan Lou, Linjun Wang, Minglong Zhang, Beibei Gu, Qingfeng Su, Yiben Xia, "Optimization for the growth of CVD diamond on Al2O3 and the response to alpha particle irradiation", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608044; https://doi.org/10.1117/12.608044
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