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8 December 2004 Optimized inductor and low-pass filter with low substrate loss on OPS/PS interlayer
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607442
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Oxidized porous silicon/porous silicon (OPS/PS) has been introduced as a low-loss substrate for an on-chip LC low-pass filter (LPF). The LPF is optimally designed with midband insertion loss (MIL) of -4.5dB and nominal cutoff frequency at 900MHz. The fabrication of the LPF based OPS/PS is in prevailing CMOS process. Experiments show that the performance of the LPF has been greatly improved with MIL of -4.54dB that meets the designed value quite well. And in comparison with MIL of LPF on SiO2/Si (8Ω cm), MIL with the proposed interlayer is lowered by 8dB, which implies that the microwave loss resulting from the substrate part can be substantially suppressed by introducing OPS/PS.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yun Liu, Yanling Shi, Xiao Feng, Yong Wang, Shaoqiang Chen, Xiaojin Li, Ziqiang Zhu, and Zongshen Lai "Optimized inductor and low-pass filter with low substrate loss on OPS/PS interlayer", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607442
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