8 December 2004 Post-treating techniques of porous silicon thin film
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608166
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
An effective and simple novel technique for post-treating of PS films has been developed. The post treatment technique can avoid the cracking of PS films and enhance the stability, the surface smoothness and the mechanical intensity of the PS films, resulting in the expansion of application of the PS films.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Ziqiang Zhu, Ziqiang Zhu, Yongfu Long, Yongfu Long, Shaoqiang Chen, Shaoqiang Chen, Xianwen Yu, Xianwen Yu, Jianzhong Zhu, Jianzhong Zhu, } "Post-treating techniques of porous silicon thin film", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608166; https://doi.org/10.1117/12.608166
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