8 December 2004 Preparation and characterization of [100]-oriented diamond films by HFCVD
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608037
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
In this paper we report high quality [100]-oriented diamond films prepared by HFCVD using hydrogen as carrier gas and C2H5OH as carbon source for the first time. The surface morphology observed by SEM showed polycrystalline diamond films with [100] faced structure with an average grain size of ~20 μm. The Raman spectrum indicated sp3 bonding with a sharp peak at 1333 cm-1. The I-V characteristics obtained via Au contact were determined by semiconductor characterization system. The electrical resistivity of HFCVD [100]-oriented diamond film was ~3.0x1010Ω cm. The capacitance and dielectric loss of films were very small with the value of 2.0pF and 0.02, respectively, and almost had no dependence with the change of frequency in high frequencies.
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Qingfeng Su, Qingfeng Su, Yiben Xia, Yiben Xia, Linjun Wang, Linjun Wang, Ling Ren, Ling Ren, Minglong Zhang, Minglong Zhang, Weimin Shi, Weimin Shi, } "Preparation and characterization of [100]-oriented diamond films by HFCVD", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608037; https://doi.org/10.1117/12.608037
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