8 December 2004 Preparation and characterization of chemically deposited SnS thin films
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607284
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Tin Sulphide is a promising material for use in solar cell with its suitable band gap energy and high absorption coefficient. In this paper, we prepared thin films of SnS by chemical bath deposition and annealed them at 300°C in N2 atmosphere. The SnS thin films were characterized structurally, optically and electrically. XRD shows the as-prepared film had orthorhombic crystal structure, exhibited Sn-rich composition and partially transformed to SnO2-xby thermal treatment. The absorption was found to be as high as 105cm-1for the photon energy above 1.55eV and the optical band gap was estimated to be 1.45eV from the transmittance spectra. The dark-and photo-conductivity were also calculated from the I-V curves of the as-prepared and thermal-treated films.
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Jing Xu, Jing Xu, Guangpu Wei, Guangpu Wei, Weiming Shi, Weiming Shi, Pengfei Chen, Pengfei Chen, Yuchun Xue, Yuchun Xue, "Preparation and characterization of chemically deposited SnS thin films", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607284; https://doi.org/10.1117/12.607284
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