Preparation of CoSi2 using microwave hydrogen plasma annealing

Tao Wang; Yong Bin Dai; S. K. Ouyang; He Sheng Shen; Jian Shen Wu

doi:10.1117/12.608042

8 December 2004 Preparation of CoSi₂ using microwave hydrogen plasma annealing

Tao Wang, Yong Bin Dai, S. K. Ouyang, He Sheng Shen, Jian Shen Wu

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608042
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Microwave hydrogen plasma annealing of sputter-deposited cobalt films on Si(100) substrate was utilized to form CoSi₂ films which were characterized utilizing X-ray diffraction(XRD), Auger electron spectra(AES) sputter depth profile and cross-sectional Field Emission Scanning Electron Microscope (FESEM). Polycrystalline CoSi₂, dominated by components with (111), was grown at the annealing temperature 600°C whereas microwave hydrogen plasma annealing at 750°C made components with (100) dominated. Moreover, it speculates that microwave anneal which promote Co atoms diffusion into Si substrate for nano-meter cobalt film during microwave anneal.

Citation Download Citation

Tao Wang, Yong Bin Dai, S. K. Ouyang, He Sheng Shen, and Jian Shen Wu "Preparation of CoSi₂ using microwave hydrogen plasma annealing", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608042

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