8 December 2004 Preparation of CoSi2 using microwave hydrogen plasma annealing
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608042
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Microwave hydrogen plasma annealing of sputter-deposited cobalt films on Si(100) substrate was utilized to form CoSi2 films which were characterized utilizing X-ray diffraction(XRD), Auger electron spectra(AES) sputter depth profile and cross-sectional Field Emission Scanning Electron Microscope (FESEM). Polycrystalline CoSi2, dominated by components with (111), was grown at the annealing temperature 600°C whereas microwave hydrogen plasma annealing at 750°C made components with (100) dominated. Moreover, it speculates that microwave anneal which promote Co atoms diffusion into Si substrate for nano-meter cobalt film during microwave anneal.
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Tao Wang, Tao Wang, Yong Bin Dai, Yong Bin Dai, S. K. Ouyang, S. K. Ouyang, He Sheng Shen, He Sheng Shen, Jian Shen Wu, Jian Shen Wu, } "Preparation of CoSi2 using microwave hydrogen plasma annealing", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608042; https://doi.org/10.1117/12.608042
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