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8 December 2004 Preparation of low-density porous silica thin films by ambient pressure drying
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607296
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Low-density silica thin films having densities ρ of 0.574-0.957(g/cm3 )and refractive indices n of 1.12-1.20 and porosities ∏ of 61%-77% as well as dielectric constants k of 1.92-2.54 were prepared by a two-step sol-gel process at ambient pressure, with a simple dip-coating procedure, which take the wet gel through solvent exchange and reaction with trimethylchlorosilane(TMCS) without any supercritical drying. The process was optimized by varying the dilution, aging, organic substitution, organic modification, heat treatment and dip-coating conditions. Ellipsometer was used to determine refractive index and thickness of films. Atomic force microscopy (AFM) used to observe the microstructure and surface of thin films. Infrared spectroscopy and anti-reflectance measurement was carried out too. Abrasion-resistant properties were tested by the methods suggested by Floch et.al .
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Lanfang Yao, Jun Shen, Guangming Wu, Xingyuan Ni, Jue Wang, and Bin Zhou "Preparation of low-density porous silica thin films by ambient pressure drying", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.607296
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