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8 December 2004 Properties of InGaN violet-LED structure
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608029
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
The violet-LEDs structure with InGaN/GaN multi-quantumn-wells (MQW) was grown by low-pressure metalorganic chemical vapor deposition (LP-MOCVD). The x-ray diffraction (XRD) revealed distinct second order satellite peak. The photoluminescence (PL) wavelength was about 399.5nm with FWHM of about 15.5nm. InGaN/GaN MQW violet-LEDs have been successfully fabricated with EL wavelength of 402nm and forward voltage about 3.6V under 20 mA injection current.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Zhonghui Li, Zhijian Yang, Tongjun Yu, Guoyi Zhang, Yuchun Feng, and Hanben Niu "Properties of InGaN violet-LED structure", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608029
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