8 December 2004 Research on the fabrication of μc-Si and its incubation layer
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608167
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Research on the fabrication of μc-Si used as the active layer of TFT and the incubation-layer of μc-Si is presented in this paper. VHF-PECVD is used to fabricate μc-Si film since the μc-Si can be fabricated with a higher growth rate than RF-PECVD. The amorphous incubation-layer between the substrate and the μc-Si layer can be thinned effectively by increasing hydrogen dilution. In addition, to obtain good TFT performance, the growth rate should be appropriate resulting in relative large grain size.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Juan Li, Juan Li, Xiaodan Zhang, Xiaodan Zhang, Chunya Wu, Chunya Wu, Jianping Liu, Jianping Liu, Shuyan Zhao, Shuyan Zhao, Zhiguo Meng, Zhiguo Meng, Ying Zhao, Ying Zhao, Shaozhen Xiong, Shaozhen Xiong, Lizhu Zhang, Lizhu Zhang, } "Research on the fabrication of μc-Si and its incubation layer", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608167; https://doi.org/10.1117/12.608167
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