Research on the fabrication of µc-Si and its incubation layer

Juan Li; Xiaodan Zhang; Chunya Wu; Jianping Liu; Shuyan Zhao; Zhiguo Meng; Ying Zhao; Shaozhen Xiong; Lizhu Zhang

doi:10.1117/12.608167

8 December 2004 Research on the fabrication of μc-Si and its incubation layer

Juan Li, Xiaodan Zhang, Chunya Wu, Jianping Liu, Shuyan Zhao, Zhiguo Meng, Ying Zhao, Shaozhen Xiong, Lizhu Zhang

Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608167
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China

Abstract

Research on the fabrication of μc-Si used as the active layer of TFT and the incubation-layer of μc-Si is presented in this paper. VHF-PECVD is used to fabricate μc-Si film since the μc-Si can be fabricated with a higher growth rate than RF-PECVD. The amorphous incubation-layer between the substrate and the μc-Si layer can be thinned effectively by increasing hydrogen dilution. In addition, to obtain good TFT performance, the growth rate should be appropriate resulting in relative large grain size.

Citation Download Citation

Juan Li, Xiaodan Zhang, Chunya Wu, Jianping Liu, Shuyan Zhao, Zhiguo Meng, Ying Zhao, Shaozhen Xiong, and Lizhu Zhang "Research on the fabrication of μc-Si and its incubation layer", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608167

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