8 December 2004 Resolution enhancement in optical lithography using polarized film mask
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607807
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
The influence of polarization on the image performance of optical lithography systems has been systematically investigated through comparing the image contrast and the process window with TE-polarization, TM-polarization and un-polarized light, respectively. The simulation results show that the TE-polarization imaging is possible to improve the image performance of optical lithography systems, especially for those systems with high numerical aperture. The effects of polarized-light imaging with a conventional masks and a polarized film mask were studied by carrying out series of experiments under the conditions: 436nm exposure wavelength, numerical aperture of 0.5 and partial-coherence factor of 0.2. It is found that the image quality of the L&S patterns with the polarized film mask is better than that of with the conventional mask and, 0.3 μm L&S patterns are obtained with the polarized film mask.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Guobin Yu, Guobin Yu, Wumei Lin, Wumei Lin, Xianzhong Chen, Xianzhong Chen, Tingwen Xing, Tingwen Xing, HanMin Yao, HanMin Yao, } "Resolution enhancement in optical lithography using polarized film mask", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607807; https://doi.org/10.1117/12.607807
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