Translator Disclaimer
8 December 2004 SiCN and Ta/TaN barriers for Cu/ultralow-k integration in 0.13µm technology
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608171
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Single damascene Cu lines using bi-layer Ta/TaN barrier with and without SiCN and plasma treatment for Cu-ultra low-k interconnect in 0.13μm technology have been investigated. It was found that the N2/H2 plasma treatment on the ULK surface before depositing barrier and Cu could reduce the line resistance significantly, but it also brought more surface defects on the sidewall and larger diffusion length. Compared with only Ta/TaN barrier layer structure, introduction of an additional SiCN layer could significantly improve the breakdown voltage, line to line leakage and thermal stability. This is because the thin SiCN layer not only effectively blocks diffusion of elements on both sides, but also significantly improves the mechanical property of the ultra low-k polymer.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
L. Y. Yang, D. H. Zhang, C. Y. Li, Peiwei Lu, and P. D. Foo "SiCN and Ta/TaN barriers for Cu/ultralow-k integration in 0.13µm technology", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608171
PROCEEDINGS
4 PAGES


SHARE
Advertisement
Advertisement
Back to Top