8 December 2004 Silicon-based one-dimensional photonic crystal microcavity
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608676
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
The layer-by-layer method is employed to prepare a-SiNx:H microcavity structure in a Plasma Enhanced Chemical Vapor Deposition (PECVD) chamber. Measurements of transmittance spectrum of as-grown samples show that the transmittance resonant peak of a cavity mode at 750 nm is introduced into the band gap of one-dimensional photonic crystal distributed Bragg reflectors based on hydrogenated amorphous silicon nitride. Also the PL measurements of a-SiNx:H microcavities are performed. There is a well agreement between the transmittance spectra and the PL of microcavity samples. In order to clarify the microcavity effects on the bulk a-SiNx:H, the PL of a λ/2-thick layer of bulk a-SiNx:H obtained under the same experimental conditions is presented. By comparison, a dramatic narrowing of emission linewidth and enhancement of PL intensity is observed. The wide emission band with 208 nm is strongly narrowed to 17 nm, and the resonant enhancement of the peak PL intensity is about two orders of magnitude with respect to the emission of the λ/2-thick layer of bulk a-SiNx:H. A linewidth of Δλ=17 nm and a quality factor of Q=50 are achieved in our one-dimensional a-SiNx photonic crystal microcavities.
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San Chen, Bo Qian, Kunji Chen, Jun Xu, Wei Li, Xinfan Huang, "Silicon-based one-dimensional photonic crystal microcavity", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.608676; https://doi.org/10.1117/12.608676

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