8 December 2004 Structural and electrical properties of Pb(Zr,Ti)O3 thin films on NiCr substrate modified by LaNiO3 and PbTiO3 buffer layers
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607755
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Ferroelectric Pb(Zr,Ti)O3 (PZT) thin films were deposited onto the NiCr (NC) substrate by using sol-gel techniques. LaNiO3 (LNO) and PbTiO3 (PT) buffer layers have been introduced to grow single-phase perovskite PZT thin films at the lower temperature of 550°C. The (110) preferred orientation of PZT thin films was favored using LNO and PT buffer layers. Dielectric constant and remnant polarization of PZT thin films on NC with a LNO buffer layer achieved ~ 430 and 13 μC/cm2 respectively. The ferroelectric P-E loops of PZT thin films were shifted towards the positive field by introducing LNO buffer layers. In addition, the coercive field and internal bias field increased with increasing the thickness of LNO layer.
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Liang He, Jinrong Cheng, Zhongyan Meng, "Structural and electrical properties of Pb(Zr,Ti)O3 thin films on NiCr substrate modified by LaNiO3 and PbTiO3 buffer layers", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607755; https://doi.org/10.1117/12.607755
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