8 December 2004 Structural ordering in amorphous silicon thin film due to post hydrogen plasma annealing
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607306
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
The effect of hydrogen plasma annealing on the microstructural transition from disorder to order in amorphous silicon film is studied in this paper. Combined with the Fourier Transmit Infrared spectroscopy, Raman scattering and absorption spectra, it is found that there exists two steps for the reaction between atomic hydrogen and Si network. It is shown that the hydrogen plasma treatment conditions strongly influence the microstructures of the amorphous Si films.
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Yunjun Rui, Jiaxin Mei, Jun Xu, Ling Yang, Wei Li, Kunji Chen, "Structural ordering in amorphous silicon thin film due to post hydrogen plasma annealing", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607306; https://doi.org/10.1117/12.607306
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