8 December 2004 Study on the structure and ferroelectric properties of sol-gel-derived Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607553
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
92%Pb(Mg1/3Nb2/3)O3-8%PbTiO3 (PMNT) thin films on Pt/TiO2/SiO2/Si substrates with and without a LaNiO3 (LNO) buffered layer have been prepared using a sol-gel method. Structures and electrical properties of these two films have been investigated and compared. Highly (111)-oriented PMNT thin films with some amounts of pyrochlore phase are obtained on bare Pt electrodes. On the contrary, (100)-oriented PMNT thin films with pure perovskite phase are formed on Pt electrodes with a LNO buffered layer. Electrical properties of the PMNT thin films are highly improved by using the buffered layer LNO. It is found that the remanent polarization (Pr) and the dielectric constant for the PMNT film with a LNO buffered layer are larger than that for the film without a LNO buffered layer.
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Aiyun Liu, Aiyun Liu, Xiangjian Meng, Xiangjian Meng, Jinglan Sun, Jinglan Sun, Jun-Hao Chu, Jun-Hao Chu, } "Study on the structure and ferroelectric properties of sol-gel-derived Pb(Mg1/3Nb2/3)O3-PbTiO3 thin films", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607553; https://doi.org/10.1117/12.607553
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