8 December 2004 The preparation of the single-phase perovskite conductive LaNiO3 films on different substrates
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607561
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
LaNiO3 thin films were deposited on Si (100) and Pt(111)/Ti/SiO2/Si substrates by a modified metalorganic decomposition technique and rapid thermal annealing method. The structures of the films were characterized by x-ray diffraction (XRD). XRD analysis show that the LaNiO3 thin films on Si (100) and Pt(111)/Ti/SiO2/Si substrates possess single-phase perovskite-type structure and highly (100)-oriented. Scanning electron microscope (SEM) and atom force microscopy (AFM) image show the LaNiO3 films with uniform and crack-free surfaces. The resisitivity vs. temperature and thickness curves of the LaNiO3 films showed that the films possessed good metallic character.
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Jian-Kang Li, Jian-Kang Li, Xi Yao, Xi Yao, Liangying Zhang, Liangying Zhang, } "The preparation of the single-phase perovskite conductive LaNiO3 films on different substrates", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607561; https://doi.org/10.1117/12.607561
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