8 December 2004 Thickness-dependent electrical properties of lead zirconate titanate thin films on titanium substrates
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607622
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Ferroelectric lead zirconate titanate Pb(Zr0.53Ti0.47)O3(PZT) thin films with various thicknesses have been fabricated on Ti substrates by using the sol-gel method with a rapid thermal annealing process (RTA). A thin layer of LaNiO3 (LNO) thin film was introduced between PZT and Ti substrate. Results indicated that PZT thin films on Ti maintained strong dielectric and ferroelectric properties. With increasing the film thickness, the dielectric constant K of PZT thin films increases, so does the leakage current density. The value of K is of 1050 and 1500 for 0.7 and 2.1 μm thick PZT thin films respectively. The remnant polarization Pr of PZT thin films achieved around 55 μC/cm2, and the coercive field Ec decreased with increasing the film thickness.
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Ping Zheng, Jinrong Cheng, Wei Lu, Zhongyan Meng, "Thickness-dependent electrical properties of lead zirconate titanate thin films on titanium substrates", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607622; https://doi.org/10.1117/12.607622
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