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8 December 2004 Thickness effect of LaNiO3 buffer layer on microstructure and electrical properties of PZT thin films
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607754
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
The thickness effects of (LaNiO3) LNO buffer layer on microstructure and electrical properties of PZT thin films were investigated. XRD patterns show that the orientation of PZT films directly prepared on the random-oriented Pt coated substrates exhibits random orientation, and that the PZT films with buffer layer reveal (100) preferred orientation to match with the (100)-oriented LNO buffer layer. Moreover, (100) orientability arises higher and the grain size becomes smaller with increasing thickness of LNO layer. As a result, the higher dielectric constant is obtained. The improvement of fatigue behaviors is due to that LNO thin films can alleviate the oxygen vacancy accumulation at the ferroelectric-electrode interface.
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Wenjuan Du, Wei Lu, Jinrong Cheng, and Zhongyan Meng "Thickness effect of LaNiO3 buffer layer on microstructure and electrical properties of PZT thin films", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607754; https://doi.org/10.1117/12.607754
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