8 December 2004 Thin films in silicon carbide semiconductor devices
Author Affiliations +
Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607264
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Silicon carbide (SiC) semiconductor devices have been established during the last decade as very useful high power, high speed and high temperature devices because of their inherent outstanding semiconductor materials properties. Due to its large band gap, SiC possesses a very high breakdown field and low intrinsic carrier concentration, which accordingly makes high voltage and high temperature operation possible. SiC is also suitable for high frequency device applications, because of the high saturation drift velocity and low permittivity. Thin film technology for various functions in the devices has been heavily researched. Suitable thin film technologies for Ohmic and low-resistive contact formation, passivation and new functionality utilizing ferroelectric materials have been developed. In ferroelectrics, the spontaneous polarization can be switched by an externally applied electric field, and thus are attractive for non-volatile memory and sensor applications. A novel integration of Junction-MOSFETs (JMOSFETs) and Nonvolatile FETs (NVFETs) on a single 4H-SiC substrate is realized. SiC JMOSFET controls the drain current effectively from the buried junction gate thereby allowing for a constant current level at elevated temperatures. SiC NVFET has similar functions with non-volatile memory capability due to ferroelectric gate stack, which operated up to 300°C with memory function retained up to 200°C.
© (2004) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Mikael Ostling, Sang-Mo Koo, Sang-Kwon Lee, Carl-Mikael Zetterling, Alexander Grishin, "Thin films in silicon carbide semiconductor devices", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607264; https://doi.org/10.1117/12.607264
PROCEEDINGS
6 PAGES


SHARE
Back to Top