8 December 2004 Vanadium oxide thin films prepared by RF magnetron sputtering method
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.607548
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
The vanadium oxide thin films were prepared by R.F. magnetron sputtering method under different deposition conditions. The microstructures of the samples have been investigated by XRD, XPS, and the Laser Scanning Confocal Microscope . By XRD and XPS, it was found that properly decreasing substrate temperature or increasing sputtering power, larger crystalline particle size and better crystalline orientation with V2O5 (001) after annealing can be gotten; Properly increasing substrate temperature or reducing sputtering power, the proportions of high valence vanadium oxides are increased. Based on our analyses, high-purity vanadium pentoxide films have been prepared by adjusting flux ratio of O2 and Ar, substrate temperature, and sputtering power.
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Zhishuan Li, Zhishuan Li, Suntao Wu, Suntao Wu, Jing Li, Jing Li, Donghui Guo, Donghui Guo, Fuchun Xu, Fuchun Xu, } "Vanadium oxide thin films prepared by RF magnetron sputtering method", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); doi: 10.1117/12.607548; https://doi.org/10.1117/12.607548
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