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8 December 2004 Visible photoluminescence originated from various mechanisms during step-by-step annealing
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Proceedings Volume 5774, Fifth International Conference on Thin Film Physics and Applications; (2004) https://doi.org/10.1117/12.608168
Event: Fifth International Conference on Thin Film Physics and Applications, 2004, Shanghai, China
Abstract
Light emission variated from violet-blue to red-infrared is observed from a-Si:/SiO2 multilayers during step by step annealing. The peak of photoluminescence (PL) changes in the range between 417nm and 750nm under excitation of 325nm light as a function of annealing temperature, which is strong enough to be observed by naked eyes. Combined with Fourier Transform Infrared (FTIR) measurements, the correlation of the red PL excited by 488nm Ar+ laser and the structural evolution during the step by step annealing is detailed studied. The origins of different PL bands and the role of hydrogen and oxygen in microstructures of a-Si:/SiO2 multilayers are discussed
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Jiaxin Mei, Yunjun Rui, Ling Yang, Jun Xu, Zhongyuan Ma, Da Zhu, Xinfan Huang, and Kunji Chen "Visible photoluminescence originated from various mechanisms during step-by-step annealing", Proc. SPIE 5774, Fifth International Conference on Thin Film Physics and Applications, (8 December 2004); https://doi.org/10.1117/12.608168
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