23 February 2005 Opto-electronics and electro-optics intensity coverters models
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Abstract
The PSpice environment enables the working point analysis of the electronics circuits, consisting of opto-electronics and electro-optics converters. To do this, an equivalent electronics model of the opto-electronics subdivisions should be designed. Models of this type require assumptions concerning the intensity of the optical radiation, which can be represented as a voltage or current in areas isolated from the rest of the electronic circuit. In this way the models of two gate's types are created. The first gate represents electrical characteristics and the second one the optical. Therefore, in the photo diode case, the optical power from optical gate is transferred into the voltage on electrical gate by defined sensitivity. For the laser diode, the current in its electrical gate is changed into optical power in optical gate by parameter called external conversion efficiency. This situation is convenient in case when the analysis of the optical radiation is done in the narrow band. That happens quite often, because the spectrum of the sensitivity of the photo diode is significantly wider than intensity spectra of laser diode or light emitting diodes.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Borecki, P. Wrzosek, J. Kruszewski, "Opto-electronics and electro-optics intensity coverters models", Proc. SPIE 5775, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments III, (23 February 2005); doi: 10.1117/12.610746; https://doi.org/10.1117/12.610746
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