Radiation hardening of ASICs in deep submicron CMOS technologies

Robert Szczygiel

doi:10.1117/12.610622

23 February 2005 Radiation hardening of ASICs in deep submicron CMOS technologies

Robert Szczygiel

Author Affiliations +

Proceedings Volume 5775, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments III; (2005) https://doi.org/10.1117/12.610622
Event: Wilga 2004, 2004, Wilga, Poland

Abstract

The radiation hardness is a critical issue for a number of ASIC applications. The ASICs used in space, physics experiments or in medical instrumentations have to deal with the radiation and its effects. The paper gives a short overview of the radiation-induced effects in the CMOS devices and presents design and system aspects of the ASIC radiation hardening. Examples of chips designed for heavy radiation environment are presented.

Citation Download Citation

Robert Szczygiel "Radiation hardening of ASICs in deep submicron CMOS technologies", Proc. SPIE 5775, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments III, (23 February 2005); https://doi.org/10.1117/12.610622

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