23 February 2005 SEE induced in SRAM operating in a superconducting electron linear accelerator environment
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Abstract
Strong fields of bremsstrahlung photons and photoneutrons are produced during the operation of high-energy electron linacs. Therefore, a mixed gamma and neutron radiation field dominates the accelerators environment. The gamma radiation induced Total Ionizing Dose (TID) effect manifests the long-term deterioration of the electronic devices operating in accelerator environment. On the other hand, the neutron radiation is responsible for Single Event Effects (SEE) and may cause a temporal loss of functionality of electronic systems. This phenomenon is known as Single Event Upset (SEU). The neutron dose (KERMA) was used to scale the neutron induced SEU in the SRAM chips. Hence, in order to estimate the neutron KERMA conversion factor for Silicon (Si), dedicated calibration experiments using an Americium-Beryllium (241Am/Be) neutron standard source was carried out. Single Event Upset (SEU) influences the short-term operation of SRAM compared to the gamma induced TID effect. We are at present investigating the feasibility of an SRAM based real-time beam-loss monitor for high-energy accelerators utilizing the SEU caused by fast neutrons. This paper highlights the effects of gamma and neutron radiations on Static Random Access Memory (SRAM), placed at selected locations near the Superconducting Linear Accelerator driving the Vacuum UV Free Electron Laser (VUVFEL) of DESY.
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D. Makowski, Bhaskar Mukherjee, M. Grecki, Stefan Simrock, "SEE induced in SRAM operating in a superconducting electron linear accelerator environment", Proc. SPIE 5775, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments III, (23 February 2005); doi: 10.1117/12.610596; https://doi.org/10.1117/12.610596
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KEYWORDS
Gamma radiation

Particles

Electronic components

Silicon

Superconductors

Digital signal processing

Control systems

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