23 March 2005 Optical gain of unstrained graded GaAs/AlxGa1-xAs quantum well laser
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Proceedings Volume 5777, XV International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers; (2005); doi: 10.1117/12.611247
Event: XV International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, 2004, Prague, Czech Republic
Abstract
We have calculated the optical gain in unstrained graded GaAs/AlxGal-xAs single quantum well lase4rs as a function of the energy of the radiation and the interface widths. The calculation of the electronic structure was done using the parabolic band model, while the valence band structure was determined taking into account the effects of the sub-band mixing between the heavy and light holes. The optical gain was calculated using the density matrix approach, considering all sub-band transitions in the quantum well the transversal electrical (TE mode) light polarization. Our results show that the peak gain is sensitive to the width and the graded profile of the interfaces, and the gain spectrum is blue-shifted as a function of the interface width.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
E. L. Albuquerque, E. C. Ferreira, J. A. P. da Costa, "Optical gain of unstrained graded GaAs/AlxGa1-xAs quantum well laser", Proc. SPIE 5777, XV International Symposium on Gas Flow, Chemical Lasers, and High-Power Lasers, (23 March 2005); doi: 10.1117/12.611247; https://doi.org/10.1117/12.611247
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KEYWORDS
Quantum wells

Interfaces

Electrons

Laser optics

Semiconductor lasers

Semiconductors

Solids

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