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31 May 2005 A monolithically integrated HgCdTe SWIR photodetector and tunable MEMS-based optical filter
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Abstract
A monolithically integrated low temperature MEMS and HgCdTe infrared detector technology has been implemented and characterised. The MEMS-based optical filter, integrated with an infrared detector, selects narrow wavelength bands in the range from 1.6 to 2.5 μm within the short-wavelength infrared (SWIR) region of the electromagnetic spectrum. The entire fabrication process is compatible with two-dimensional infrared focal plane array technology. The fabricated device consists of an HgCdTe SWIR photoconductor, two distributed Bragg mirrors formed of Ge-SiO-Ge, a sacrificial spacer layer within the cavity, which is then removed to leave an air-gap, and a silicon nitride membrane for structural support. The tuning spectrum from fabricated MEMS filters on photoconductive detectors shows a wide tuning range and high percentage transmission is achieved with a tuning voltage of only 7.5 V. The FWHM ranged from 95-105 nm over a tuning range of 2.2 μm to 1.85 μm. Finite element modelling of various geometries for the silicon nitride membrane will also be presented. The modelling is used to determine the best geometry in terms of fill factor, voltage displacement prediction and membrane bowing.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
J. Antoszewski, K. J. Winchester, A. J. Keating, T. Nguyen, K. K. M. B. D. Silva, H. Huang, C. A. Musca, J. M. Dell, L. Faraone, P. Mitra, J. D. Beck, M. R. Skokan, and J. E. Robinson "A monolithically integrated HgCdTe SWIR photodetector and tunable MEMS-based optical filter", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005); https://doi.org/10.1117/12.603519
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