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31 May 2005 Dual-waveband infrared focal plane arrays using MCT grown by MOVPE on silicon substrates (Invited Paper)
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Dual-waveband, Focal Plane Arrays (FPAs) based on Hg1-xCdxTe multi-layer structures have previously been produced by the Molecular Beam Epitaxy (MBE) growth technique. It is shown that the multi-layer structures required for dual-waveband devices can also be grown by Metal Organic Vapor Phase Epitaxy (MOVPE). The MOVPE growth process allows excellent control of both the composition and doping profiles and has the advantage of allowing growth on a range of substrates including silicon. Previous research on back-to-back diodes for dual-waveband has concentrated on npn structures. The design of the alternative pnp structures is discussed and a model is developed which gives a good fit to the measured spectra. We report on the design and characterization of dual-waveband detectors including current-voltage and spectral cross talk for the case of two close sub-bands within the 3-5 μm mid-wave infrared (MWIR) spectral range. The mechanisms for spectral cross talk are discussed including incomplete absorption, transistor action and radiative coupling. A custom readout circuit (ROIC) has been designed. This allows the capture of data from the two bands which is spatially aligned but sequential in time.
© (2005) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Jean Giess, Mark A. Glover, Neil T. Gordon, Andrew Graham, Mary K. Haigh, Janet E. Hails, David J. Hall, and David J. Lees "Dual-waveband infrared focal plane arrays using MCT grown by MOVPE on silicon substrates (Invited Paper)", Proc. SPIE 5783, Infrared Technology and Applications XXXI, (31 May 2005);


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